Does the Hall coefficient exhibit critical behavior approaching the metal-insulator transition?

D. W. Koon; T. G. Castner

doi:10.1103/PhysRevLett.60.1755

Does the Hall coefficient exhibit critical behavior approaching the metal-insulator transition?

D. W. Koon and T. G. Castner

Phys. Rev. Lett. 60, 1755 – Published 25 April 1988

Abstract

Hall-effect measurements on uncompensated barely metallic Si:As samples have been made at temperatures between 4.2 and 0.5 K with the objective of obtaining the Hall coefficient as the magnetic field H and T approach zero. The Si:As results and a reanalysis of earlier Si:P data do not yield critical behavior of $R_{H}^{- 1}$ contrary to recently reported results for Ge:Sb and other systems. The results agree with localization-theory predictions.