Concepts based on Si—H bond breakup (normal strength ∼3.5 eV) or weakly bonded H have not accounted satisfactorily for many low-temperature phenomena: rapid decrease in the spin signal in the range 25–300?deC while the Si—H bond density is conserved or decreases; early H evolution stage at 200–450?deC and H diffuision, both with an activation energy of only 1.5 eV, etc. An elegant microscopic explanation of these and other phenomena is given in terms of a novel mechanism that is unique to the amorphous state: defect-mediated H diffusion during which the defects are annihilated.

• Received 22 January 1987

DOI:https://doi.org/10.1103/PhysRevLett.58.1344