Electron-Electron Scattering in Nondegenerate Semiconductors: Driving the Anisotropic Distribution toward a Displaced Maxwellian

Ned S. Wingreen, Christopher J. Stanton, and John W. Wilkins
Phys. Rev. Lett. 57, 1084 – Published 25 August 1986
PDFExport Citation

Abstract

The Boltzmann equation allows a study of the effect of electron-electron scattering on the anisotropy of the electron distribution in a large electric field. An effective electron-electron scattering rate 1τee relates how the quadrupole moment of the distribution in velocity space relaxes, lower moments being preserved by electron-electron scattering. We report (1) calculated distribution functions and (2) the density and drift-velocity dependence of 1τee for realistic electron-electron scattering.

  • Received 30 May 1986

DOI:https://doi.org/10.1103/PhysRevLett.57.1084

©1986 American Physical Society

Authors & Affiliations

Ned S. Wingreen, Christopher J. Stanton, and John W. Wilkins

  • Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, New York 14853

Comments & Replies

Comment on ‘‘Electron-electron scattering in nondegenerate semiconductors’’

Monique Combescot and Roland Combescot
Phys. Rev. Lett. 59, 375 (1987)

References (Subscription Required)

Click to Expand
Issue

Vol. 57, Iss. 8 — 25 August 1986

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×