Observation of Impurity Cyclotron Resonance in <span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mrow><msub><mrow><mi mathvariant="normal">Hg</mi></mrow><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub></mrow><mrow><msub><mrow><mi mathvariant="normal">Cd</mi></mrow><mrow><mi>x</mi></mrow></msub></mrow><mi mathvariant="normal">Te</mi></math></span>

V. J. Goldman; H. D. Drew; M. Shayegan; D. A. Nelson

doi:10.1103/PhysRevLett.56.968

Observation of Impurity Cyclotron Resonance in ${Hg}_{1 - x} {Cd}_{x} Te$

V. J. Goldman, H. D. Drew, M. Shayegan, and D. A. Nelson

Phys. Rev. Lett. 56, 968 – Published 3 March 1986

Abstract

Impurity cyclotron resonance (ICR) has been observed in $n - {Hg}_{1 - x} {Cd}_{x} Te$ . This experiment provides conclusive evidence for donor-bound electrons in this semiconductor. The separation between the ICR and the free-carrier resonance is in satisfactory agreement with theoretical predictions for hydrogenic donors in a strong magnetic field. Saturation of the ICR absorption was used to determine the electron lifetimes of Å $10^{- 6}$ sec in the lowest Landau level.