Direct Determination of Sizes of Excitations from Optical Measurements on Ion-Implanted GaAs

D. E. Aspnes; S. M. Kelso; C. G. Olson; D. W. Lynch

doi:10.1103/PhysRevLett.48.1863

Direct Determination of Sizes of Excitations from Optical Measurements on Ion-Implanted GaAs

D. E. Aspnes, S. M. Kelso, C. G. Olson, and D. W. Lynch

Phys. Rev. Lett. 48, 1863 – Published 28 June 1982

Abstract

Using a simple model that describes the decrease of the amplitudes of optical structures in ion-implanted crystals, projected areas of several valence and core excitons in GaAs are determined. The last remnant of crystal-related optical structure vanishes for crystallite areas less than ${(16 Å)}^{2}$ .