Chemical Influence of Holes and Electrons on Dislocation Velocity in Semiconductors

H. L. Frisch and J. R. Patel
Phys. Rev. Lett. 18, 784 – Published 8 May 1967
PDFExport Citation

Abstract

  • Received 20 February 1967

DOI:https://doi.org/10.1103/PhysRevLett.18.784

©1967 American Physical Society

Authors & Affiliations

H. L. Frisch and J. R. Patel

  • Bell Telephone Laboratories, Murray Hill, New Jersey

References (Subscription Required)

Click to Expand
Issue

Vol. 18, Iss. 19 — 8 May 1967

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×