Mott versus Hybridization Gap in the Low-Temperature Phase of 1TTaS2

Francesco Petocchi, Christopher W. Nicholson, Bjoern Salzmann, Diego Pasquier, Oleg V. Yazyev, Claude Monney, and Philipp Werner
Phys. Rev. Lett. 129, 016402 – Published 30 June 2022
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Abstract

We address the long-standing problem of the ground state of 1TTaS2 by computing the correlated electronic structure of stacked bilayers using the GW+EDMFT method. Depending on the surface termination, the semi-infinite uncorrelated system is either band insulating or exhibits a metallic surface state. For realistic values of the on-site and inter-site interactions, a Mott gap opens in the surface state, but it is smaller than the gap originating from the bilayer structure. Our results are consistent with recent scanning tunneling spectroscopy measurements for different terminating layers, and with our own photoemission measurements, which indicate the coexistence of spatial regions with different gaps in the electronic spectrum. By comparison to exact diagonalization data, we clarify the interplay between Mott insulating and band insulating behavior in this archetypal layered system.

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  • Received 3 February 2022
  • Revised 7 April 2022
  • Accepted 1 June 2022

DOI:https://doi.org/10.1103/PhysRevLett.129.016402

© 2022 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Francesco Petocchi1, Christopher W. Nicholson1,2, Bjoern Salzmann1, Diego Pasquier3, Oleg V. Yazyev3, Claude Monney1, and Philipp Werner1

  • 1Department of Physics, University of Fribourg, 1700 Fribourg, Switzerland
  • 2Fritz-Haber-Institute der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195 Berlin, Germany
  • 3Institute of Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland

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Issue

Vol. 129, Iss. 1 — 1 July 2022

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