• Open Access

Gate-Tunable Fractional Chern Insulators in Twisted Double Bilayer Graphene

Zhao Liu, Ahmed Abouelkomsan, and Emil J. Bergholtz
Phys. Rev. Lett. 126, 026801 – Published 12 January 2021
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Abstract

We predict twisted double bilayer graphene to be a versatile platform for the realization of fractional Chern insulators readily targeted by tuning the gate potential and the twist angle. Remarkably, these topologically ordered states of matter, including spin singlet Halperin states and spin polarized states in Chern number C=1 and C=2 bands, occur at high temperatures and without the need for an external magnetic field.

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  • Received 26 April 2020
  • Accepted 11 December 2020

DOI:https://doi.org/10.1103/PhysRevLett.126.026801

Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation, and DOI. Funded by Bibsam.

Published by the American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Zhao Liu1,*, Ahmed Abouelkomsan2,†, and Emil J. Bergholtz2,‡

  • 1Zhejiang Institute of Modern Physics, Zhejiang University, Hangzhou 310027, China
  • 2Department of Physics, Stockholm University, AlbaNova University Center, 106 91 Stockholm, Sweden

  • *zhaol@zju.edu.cn
  • ahmed.abouelkomsan@fysik.su.se
  • emil.bergholtz@fysik.su.se

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Issue

Vol. 126, Iss. 2 — 15 January 2021

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