Propagation Induced Dephasing in Semiconductor High-Harmonic Generation

Isak Kilen, Miroslav Kolesik, Jorg Hader, Jerome V. Moloney, Ulrich Huttner, Maria K. Hagen, and Stephan W. Koch
Phys. Rev. Lett. 125, 083901 – Published 19 August 2020
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Abstract

The influence of propagation on the nonperturbative high-harmonic features in long-wavelength strong pulse excited semiconductors is studied using a fully microscopic approach. For sample lengths exceeding the wavelength of the exciting light, it is shown that the propagation effectively acts as a very strong additional dephasing that reduces the relative height of the emission plateau up to six orders of magnitude. This propagation induced dephasing clarifies the need to use extremely short polarization decay times for the quantitative analysis of experimental observations.

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  • Received 27 November 2019
  • Accepted 30 July 2020

DOI:https://doi.org/10.1103/PhysRevLett.125.083901

© 2020 American Physical Society

Physics Subject Headings (PhySH)

Nonlinear Dynamics

Authors & Affiliations

Isak Kilen*, Miroslav Kolesik, Jorg Hader, and Jerome V. Moloney

  • Wyant College of Optical Sciences, University of Arizona, 1630 East University Boulevard, Tucson, Arizona 85721, USA

Ulrich Huttner, Maria K. Hagen, and Stephan W. Koch

  • Department of Physics and Material Sciences Center, Philipps-Universität Marburg, Renthof 5, Marburg 35032, Germany

  • *ikilen@email.arizona.edu

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Issue

Vol. 125, Iss. 8 — 21 August 2020

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