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Giant Quantum Hall Plateau in Graphene Coupled to an InSe van der Waals Crystal

Z. R. Kudrynskyi, M. A. Bhuiyan, O. Makarovsky, J. D. G. Greener, E. E. Vdovin, Z. D. Kovalyuk, Y. Cao, A. Mishchenko, K. S. Novoselov, P. H. Beton, L. Eaves, and A. Patanè
Phys. Rev. Lett. 119, 157701 – Published 10 October 2017
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Abstract

We report on a “giant” quantum Hall effect plateau in a graphene-based field-effect transistor where graphene is capped by a layer of the van der Waals crystal InSe. The giant quantum Hall effect plateau arises from the close alignment of the conduction band edge of InSe with the Dirac point of graphene. This feature enables the magnetic-field- and electric-field-effect-induced transfer of charge carriers between InSe and the degenerate Landau level states of the adjacent graphene layer, which is coupled by a van der Waals heterointerface to the InSe.

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  • Received 6 June 2017

DOI:https://doi.org/10.1103/PhysRevLett.119.157701

Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation, and DOI.

Published by the American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Z. R. Kudrynskyi1, M. A. Bhuiyan1, O. Makarovsky1,*, J. D. G. Greener1, E. E. Vdovin1,2, Z. D. Kovalyuk3, Y. Cao4,5, A. Mishchenko4, K. S. Novoselov4, P. H. Beton1, L. Eaves1, and A. Patanè1,†

  • 1School of Physics and Astronomy, The University of Nottingham, Nottingham NG7 2RD, United Kingdom
  • 2Institute of Microelectronics Technology and High Purity Materials, RAS, Chernogolovka 142432, Russia
  • 3Institute for Problems of Materials Science, The National Academy of Sciences of Ukraine, Chernivtsi Branch, Chernivtsi 58001, Ukraine
  • 4School of Physics and Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
  • 5National Graphene Institute, University of Manchester, Manchester M13 9PL, United Kingdom

  • *Corresponding author. oleg.makarovsky@nottingham.ac.uk
  • Corresponding author. amalia.patane@nottingham.ac.uk

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Issue

Vol. 119, Iss. 15 — 13 October 2017

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