Charge-Insensitive Single-Atom Spin-Orbit Qubit in Silicon

Joe Salfi, Jan A. Mol, Dimitrie Culcer, and Sven Rogge
Phys. Rev. Lett. 116, 246801 – Published 14 June 2016
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Abstract

High fidelity entanglement of an on-chip array of spin qubits poses many challenges. Spin-orbit coupling (SOC) can ease some of these challenges by enabling long-ranged entanglement via electric dipole-dipole interactions, microwave photons, or phonons. However, SOC exposes conventional spin qubits to decoherence from electrical noise. Here, we propose an acceptor-based spin-orbit qubit in silicon offering long-range entanglement at a sweet spot where the qubit is protected from electrical noise. The qubit relies on quadrupolar SOC with the interface and gate potentials. As required for surface codes, 105 electrically mediated single-qubit and 104 dipole-dipole mediated two-qubit gates are possible in the predicted spin lifetime. Moreover, circuit quantum electrodynamics with single spins is feasible, including dispersive readout, cavity-mediated entanglement, and spin-photon entanglement. An industrially relevant silicon-based platform is employed.

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  • Received 19 December 2015

DOI:https://doi.org/10.1103/PhysRevLett.116.246801

© 2016 American Physical Society

Physics Subject Headings (PhySH)

Quantum Information, Science & TechnologyCondensed Matter, Materials & Applied Physics

Authors & Affiliations

Joe Salfi1,2, Jan A. Mol1,2, Dimitrie Culcer1, and Sven Rogge1,2

  • 1School of Physics, The University of New South Wales, Sydney, New South Wales 2052, Australia
  • 2Centre for Quantum Computation and Communication Technology, The University of New South Wales, Sydney, New South Wales 2052, Australia

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Issue

Vol. 116, Iss. 24 — 17 June 2016

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