Effects of Landau Level Mixing on the Fractional Quantum Hall Effect in Monolayer Graphene

Michael R. Peterson and Chetan Nayak
Phys. Rev. Lett. 113, 086401 – Published 18 August 2014

Abstract

We report results of exact diagonalization studies of the spin- and valley-polarized fractional quantum Hall effect in the N=0 and N=1 Landau levels in graphene. We use an effective model that incorporates Landau level mixing to lowest order in the parameter κ=((e2/ε)/(vF/))=(e2/εvF), which is magnetic field independent and can only be varied through the choice of substrate. We find Landau level mixing effects are negligible in the N=0 Landau level for κ2. In fact, the lowest Landau level projected Coulomb Hamiltonian is a better approximation to the real Hamiltonian for graphene than it is for semiconductor based quantum wells. Consequently, the principal fractional quantum Hall states are expected in the N=0 Landau level over this range of κ. In the N=1 Landau level, fractional quantum Hall states are expected for a smaller range of κ and Landau level mixing strongly breaks particle-hole symmetry, producing qualitatively different results compared to the N=0 Landau level. At half filling of the N=1 Landau level, we predict the anti-Pfaffian state will occur for κ0.250.75.

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  • Received 19 May 2014

DOI:https://doi.org/10.1103/PhysRevLett.113.086401

© 2014 American Physical Society

Authors & Affiliations

Michael R. Peterson1 and Chetan Nayak2,3

  • 1Department of Physics & Astronomy, California State University Long Beach, Long Beach, California 90840, USA
  • 2Department of Physics, University of California, Santa Barbara, California 93106, USA
  • 3Microsoft Research, Station Q, Elings Hall, University of California, Santa Barbara, California 93106, USA

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Issue

Vol. 113, Iss. 8 — 22 August 2014

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