We show that the merging of the spin- and valley-split Landau levels at the chemical potential is an intrinsic property of a strongly interacting two-dimensional electron system in silicon. Evidence for the level merging is given by available experimental data.
DOI:https://doi.org/10.1103/PhysRevLett.112.186402
© 2014 American Physical Society
Schematic diagram of merging of the spin- and valley-split Landau levels at the chemical potential. The occupied levels are indicated by dots. The fillings of the two quantum levels at the chemical potential vary with changing electron density.
Reuse & PermissionsPositions of the Shubnikov-de Haas oscillation minima in the (, ) plane (squares) and the expected positions of the cyclotron and spin minima calculated according to the formula (solid lines). The position of the metal-insulator transition in is indicated. The calculated merging boundary is shown by the solid blue line for and the dotted violet line for in Eq. (16). This makes sense at filling factor .
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