Abstract
We report the evolution of the fractional quantum Hall state (FQHS) at a total Landau level (LL) filling factor of in wide GaAs quantum wells in which electrons occupy two electric subbands. The data reveal subtle and distinct evolutions as a function of density, magnetic field tilt angle, or symmetry of the charge distribution. At intermediate tilt angles, for example, we observe a strengthening of the FQHS. Moreover, in a well with asymmetric change distribution, there is a developing FQHS when the LL filling factor of the symmetric subband equals while the antisymmetric subband has a filling factor of .
- Received 19 August 2011
DOI:https://doi.org/10.1103/PhysRevLett.107.266802
© 2011 American Physical Society