Spin-Polarized to Valley-Polarized Transition in Graphene Bilayers at ν=0 in High Magnetic Fields

Seyoung Kim, Kayoung Lee, and E. Tutuc
Phys. Rev. Lett. 107, 016803 – Published 30 June 2011

Abstract

We investigate the transverse electric field (E) dependence of the ν=0 quantum Hall state (QHS) in dual-gated graphene bilayers in high magnetic fields. The longitudinal resistivity ρxx measured at ν=0 shows an insulating behavior which is strongest in the vicinity of E=0, as well as at large E fields. At a fixed perpendicular magnetic field (B), the ν=0 QHS undergoes a transition as a function of the applied E, marked by a minimum, temperature-independent ρxx. This observation is explained by a transition from a spin-polarized ν=0 QHS at small E fields to a valley- (layer-)polarized ν=0 QHS at large E fields. The E field value at which the transition occurs follows a linear dependence on B.

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  • Received 30 January 2011

DOI:https://doi.org/10.1103/PhysRevLett.107.016803

© 2011 American Physical Society

Authors & Affiliations

Seyoung Kim, Kayoung Lee, and E. Tutuc

  • Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, USA

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Issue

Vol. 107, Iss. 1 — 1 July 2011

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