Theory of Spin-Dependent Phonon-Assisted Optical Transitions in Silicon

Pengke Li (李鹏科) and Hanan Dery
Phys. Rev. Lett. 105, 037204 – Published 15 July 2010
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Abstract

Silicon is an ideal material choice for spintronics devices due to its relatively long spin relaxation time and mature technology. To date, however, there are no parameter-free methods to accurately determine the degree of spin polarization of electrons in silicon. This missing link is established with a theory that provides concise relations between the degrees of spin polarization and measured circular polarization for each of the dominant phonon-assisted optical transitions. The phonon symmetries play a key role in elucidating recent spin injection experiments in silicon.

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  • Received 5 March 2010

DOI:https://doi.org/10.1103/PhysRevLett.105.037204

©2010 American Physical Society

Authors & Affiliations

Pengke Li (李鹏科)1,* and Hanan Dery1,2

  • 1Department of Electrical and Computer Engineering, University of Rochester, Rochester, New York, 14627, USA
  • 2Department of Physics, University of Rochester, Rochester, New York, 14627, USA

  • *pengke@ece.rochester.edu

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Issue

Vol. 105, Iss. 3 — 16 July 2010

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