Figure 1

(a) Side cutaway showing the crystal lattice of silicon in the $(\overline{1}10)$ plane. The dashed line follows the bulk-terminated surface for several important orientations. (b) Experimental LEED pattern at 35 eV beam energy. The positions of missing spots are indicated by the white circles. (c) Sketch of the LEED pattern with ($1\times 1$) and ($12\times 1$) reciprocal unit cells and spot labels (black). The bulk directions are also given. The positions of the missing spots are indicated by empty black circles. The orientation of the glide plane is indicated by a dashed line.Reuse & Permissions

Figure 2

(a) Large scale STM topography of the annealed Si(331) surface. (b) High-resolution image with unit cell (full line) and the glide plane (dashed line) indicated. Bias voltage 2.0 V, set-point current 0.06 nA, temperature 77 K.Reuse & Permissions

Figure 3

(a) Side and (b) top view of the Si(331) surface. Black dots indicate the position of surface atoms carrying a dangling bond, some of which are saturated by pentamers and adatoms (empty circles). Surface atoms whose dangling bond is not saturated are rest atoms. The ($1\times 1$) and ($12\times 1$) unit cells are shown. For comparison an experimental and a simulated STM image is underlaid. The dashed line represents the glide plane. (c) Graphical proof for the existence of the glide plane. (d) Sketch of the pentamer and the adatom with atom labels. (e) Side and (f) top view of the Si(110) surface (see text).Reuse & Permissions