Figure 1

Contour plots of (a) experimentally measured and (b) theoretically described FK oscillations in the UV region of the electroabsorption spectrum for a SWNT film on fused quartz assuming $E_{g,\mathrm{FK}}^1=5.35\mathrm{eV}$, approximately one half of the gap between the SWNT (1 eV) and quartz (9 eV) band gaps. (c) Schematic energy band diagram of carrier tunneling into the insulating band gap for the SWNT/fused quartz system illustrating the FK effect.Reuse & Permissions

Figure 2

Scaling of the two confinement energies $E_{g,\mathrm{FK}}^1$ and $E_{g,\mathrm{FK}}^2$ from a two term expansion of $\Delta {\alpha }_{\mathrm{tot}}$ [Eq. (5)] as a function of the average band gap in the SWNT film, ${\overline{E}}_{11}^S$ [using Eq. (4)]. The trend is linear and increasing with the value of the average band gap, except for the functionalized film, SF-5, which demonstrates blue shifts in energy.Reuse & Permissions

Figure 3

(a) Peak intensities of the SWNT films with different ratio of metallic to semiconducting content at the photon energies (PE) of 5.7 and 6.2 eV as a function of applied electric field. (b) Susceptibility of the SWNT films with different ratio of metallic to semiconducting content as a function of conductance. The closed and open symbols represent the susceptibility of the peak at 5.7 and 6.2 eV, respectively, of which the data fits are indicated with the solid and dashed lines, respectively. (c) Schematic illustration for interpreting the role of the metallic SWNT in the film. (d) Time response of the optical modulation of the SF-4 with turning on and off the electric field of $20\mathrm{V}/\mathrm{cm}$ at 5.7 eV. The red dotted line is the best fit to an Arrhenius form.Reuse & Permissions