Crystalline Amorphous Semiconductor Superlattice

T. C. Chong, L. P. Shi, X. Q. Wei, R. Zhao, H. K. Lee, P. Yang, and A. Y. Du
Phys. Rev. Lett. 100, 136101 – Published 31 March 2008

Abstract

A new class of superlattice, crystalline amorphous superlattice (CASL), by alternatively depositing two semiconductor materials, is proposed. CASL displays three states depending on the component materials’ phase: both polycrystalline phases, both amorphous phases, and one polycrystalline phase while another amorphous phase. Using materials capable of reversible phase transition, CASL can demonstrate reversibility among three states. GeTe/Sb2Te3 CASL has been synthesized and proved by x-ray reflectometry and TEM results. The reversible transition among three states induced by electrical and laser pulse was observed. The changes in the optical absorption edge, electrical resistivity, thermal conductivity, and crystallization temperature as a function of layer thickness are interpreted as quantum or nanoeffects. The unique properties of CASL enable the design of materials with specific properties.

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  • Received 12 September 2007

DOI:https://doi.org/10.1103/PhysRevLett.100.136101

©2008 American Physical Society

Authors & Affiliations

T. C. Chong1,2, L. P. Shi1,*, X. Q. Wei1,2, R. Zhao1, H. K. Lee1, P. Yang3, and A. Y. Du4

  • 1Data Storage Institute, A⋆STAR (Agency for Science, Technology and Research), Singapore 117608
  • 2Electrical Computer Engineering Department, National University of Singapore, Singapore 117576
  • 3Singapore Synchrotron Light Source (SSLS), National University of Singapore, Singapore 117603
  • 4Institute of Microelectronics, A⋆STAR (Agency for Science, Technology and Research), Singapore 117685

  • *shi_luping@dsi.a-star.edu.sg

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Vol. 100, Iss. 13 — 4 April 2008

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