Two-dimensional epitaxial superconductor-semiconductor heterostructures: A platform for topological superconducting networks

J. Shabani, M. Kjaergaard, H. J. Suominen, Younghyun Kim, F. Nichele, K. Pakrouski, T. Stankevic, R. M. Lutchyn, P. Krogstrup, R. Feidenhans'l, S. Kraemer, C. Nayak, M. Troyer, C. M. Marcus, and C. J. Palmstrøm
Phys. Rev. B 93, 155402 – Published 1 April 2016
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Abstract

A key challenge in fabrication of superconductor (S)-semiconductor (Sm) hybrid devices is forming highly transparent contacts between the active electrons in the semiconductor and the superconducting metal. In this work, we show that a near perfect interface and a highly transparent contact can be achieved using epitaxial growth of aluminum on an InAs two-dimensional electron system. We demonstrate that this material system, Al-InAs, satisfies all the requirements necessary to reach into the topological superconducting regime by individual characterization of the semiconductor two-dimensional electron system, superconductivity of Al, and performance of S-Sm-S junctions. This exciting development might lead to a number of useful applications ranging from spintronics to quantum computing.

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  • Received 24 November 2015
  • Revised 4 March 2016
  • Corrected 11 April 2016

DOI:https://doi.org/10.1103/PhysRevB.93.155402

©2016 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Corrections

11 April 2016

Erratum

Publisher's Note: Two-dimensional epitaxial superconductor-semiconductor heterostructures: A platform for topological superconducting networks [Phys. Rev. B 93, 155402 (2016)]

J. Shabani, M. Kjaergaard, H. J. Suominen, Younghyun Kim, F. Nichele, K. Pakrouski, T. Stankevic, R. M. Lutchyn, P. Krogstrup, R. Feidenhans'l, S. Kraemer, C. Nayak, M. Troyer, C. M. Marcus, and C. J. Palmstrøm
Phys. Rev. B 93, 159908 (2016)

Authors & Affiliations

J. Shabani1,2, M. Kjaergaard3, H. J. Suominen3, Younghyun Kim4, F. Nichele3, K. Pakrouski5, T. Stankevic3, R. M. Lutchyn6, P. Krogstrup3, R. Feidenhans'l3, S. Kraemer7, C. Nayak4,6, M. Troyer5, C. M. Marcus3, and C. J. Palmstrøm1,7,8

  • 1California NanoSystems Institute, University of California, Santa Barbara, California 93106, USA
  • 2Department of Physics, City College of the City University of New York, New York, New York 10031, USA
  • 3Center for Quantum Devices and Station Q Copenhagen, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
  • 4Department of Physics, University of California, Santa Barbara, California 93106, USA
  • 5Theoretical Physics and Station Q Zurich, ETH Zurich, 8093 Zürich, Switzerland
  • 6Microsoft Research, Station Q, University of California, Santa Barbara, California 93106, USA
  • 7Materials Research Laboratories, University of California, Santa Barbara, California 93106, USA
  • 8Department of Electrical Engineering, University of California, Santa Barbara, California 93106, USA

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Issue

Vol. 93, Iss. 15 — 15 April 2016

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