Abstract
We report on the direct and quantitative evaluation of density of gap states (DOGS) in large-size single crystals by using ultralow-background, high-sensitivity ultraviolet photoemission spectroscopy. The charging of the crystals during photoionization was overcome using photoconduction induced by simultaneous laser irradiation. By comparison with the spectra of as-deposited and gas exposed thin films the following results were found: (i) The DOGS near the highest occupied molecular orbital edge in the single crystals mainly originates from the exposure to inert and ambient gas atmosphere during the sample preparation, storage, and transfer; (ii) the contribution of other sources of gap states such as structural imperfections at grain boundaries is negligible .
- Received 27 February 2015
- Publisher error corrected 23 September 2015
DOI:https://doi.org/10.1103/PhysRevB.92.115102
©2015 American Physical Society
Physics Subject Headings (PhySH)
Corrections
23 September 2015