Molecular nitrogen acceptors in ZnO nanowires induced by nitrogen plasma annealing

C. Ton-That, L. Zhu, M. N. Lockrey, M. R. Phillips, B. C. C. Cowie, A. Tadich, L. Thomsen, S. Khachadorian, S. Schlichting, N. Jankowski, and A. Hoffmann
Phys. Rev. B 92, 024103 – Published 6 July 2015

Abstract

X-ray absorption near-edge spectroscopy, photoluminescence, cathodoluminescence, and Raman spectroscopy have been used to investigate the chemical states of nitrogen dopants in ZnO nanowires. It is found that nitrogen exists in multiple states: NO,NZn, and loosely bound N2 molecule. The results establish a direct link between a donor-acceptor pair emission at 3.232 eV and the concentration of loosely bound N2. This work confirms that N2 at Zn site is a potential candidate for producing a shallow acceptor state in N-doped ZnO as theoretically predicted by Lambrecht and Boonchun [Phys. Rev. B 87, 195207 (2013)]. Additionally, shallow acceptor states arising from NO complexes have been ruled out in this paper.

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  • Received 13 June 2014
  • Revised 3 May 2015

DOI:https://doi.org/10.1103/PhysRevB.92.024103

©2015 American Physical Society

Authors & Affiliations

C. Ton-That*, L. Zhu, M. N. Lockrey, and M. R. Phillips

  • School of Mathematical and Physical Sciences, University of Technology Sydney, PO Box 123, Broadway, New South Wales 2007, Australia

B. C. C. Cowie, A. Tadich, and L. Thomsen

  • Australian Synchrotron, 800 Blackburn Road, Clayton, Victoria 3168, Australia

S. Khachadorian, S. Schlichting, N. Jankowski, and A. Hoffmann

  • Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin, Germany

  • *Corresponding author: cuong.ton-that@uts.edu.au

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Vol. 92, Iss. 2 — 1 July 2015

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