k dependence of the spin polarization in Mn5Ge3/Ge(111) thin films

W. Ndiaye, J.-M. Mariot, P. De Padova, M. C. Richter, W. Wang, O. Heckmann, A. Taleb-Ibrahimi, P. Le Fèvre, F. Bertran, C. Cacho, M. Leandersson, T. Balasubramanian, A. Stroppa, S. Picozzi, and K. Hricovini
Phys. Rev. B 91, 125118 – Published 11 March 2015

Abstract

Mn5Ge3(001) thin films grown on Ge(111) were studied by angle- and spin-resolved photoemission using synchrotron radiation in the 17–40 eV photon energy range. The photoelectron spectra were simulated starting from a first-principles band-structure calculation for the ground state, using the free-electron approximation for the final states, taking into account photohole lifetime effects and k broadening plus correlation effects, but ignoring transition matrix elements. The measured spin polarizations for the various k points investigated in the ΓMLA plane of the Brillouin zone are found to be in fair enough agreement with the simulated ones, providing a strong support to the ground-state band-structure calculations. Possible origins for the departures between either simulations and experiments or previous and present experiments are discussed.

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  • Received 21 October 2014
  • Revised 16 February 2015

DOI:https://doi.org/10.1103/PhysRevB.91.125118

©2015 American Physical Society

Authors & Affiliations

W. Ndiaye1, J.-M. Mariot2,3, P. De Padova4, M. C. Richter1,5, W. Wang1,6,*, O. Heckmann1,5, A. Taleb-Ibrahimi7, P. Le Fèvre8, F. Bertran8, C. Cacho9, M. Leandersson10, T. Balasubramanian10, A. Stroppa11,12, S. Picozzi11,12, and K. Hricovini1,5

  • 1Laboratoire de Physique des Matériaux et des Surfaces, Université de Cergy-Pontoise, 5 mail Gay-Lussac, 95031 Cergy-Pontoise, France
  • 2Sorbonne Universités, UPMC Univ Paris 06, UMR 7614, Laboratoire de Chimie Physique–Matière et Rayonnement, 11 rue Pierre et Marie Curie, F-75231 Paris Cedex 05, France
  • 3CNRS, UMR 7614, Laboratoire de Chimie Physique–Matière et Rayonnement, 11 rue Pierre et Marie Curie, F-75231 Paris Cedex 05, France
  • 4CNR, Istituto di Struttura della Materia, via Fosso del Cavaliere, 00133 Roma, Italy
  • 5DSM, IRAMIS, Service de Physique de l'Etat Condensé, CEA-Saclay, 91191 Gif-sur-Yvette, France
  • 6Institute of Precision Optical Engineering, School of Physics Science and Engineering, Tongji University, Shanghai 200092, People's Republic of China
  • 7UR1-CNRS/Synchrotron SOLEIL, Saint-Aubin, B.P. 48, 91192 Gif-sur-Yvette Cedex, France
  • 8Synchrotron SOLEIL, Saint-Aubin, B.P. 48, 91192 Gif-sur-Yvette Cedex, France
  • 9Central Laser Facility, Rutherford Appleton Laboratory, Didcot, Oxon OX11 0QX, United Kingdom
  • 10Lund University, MAX-lab, P.O. Box 118, 221 00 Lund, Sweden
  • 11CNR, Institute for Superconducting and Innovative Materials and Devices (CNR-SPIN), 67100 L'Aquila, Italy
  • 12Dipartimento di Fisica, Università degli Studi dell'Aquila, Via Vetoio 10, 67010 Coppito (L'Aquila), Italy

  • *Present address: Department of Physics, Biology and Chemistry, Surface and Semiconductor Physics Group, Linköping University, SE-581 83 Linköping, Sweden.

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Vol. 91, Iss. 12 — 15 March 2015

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