We evaluate the Landé $g$ factor of electrons in quantum dots (QDs) fabricated from GaAs quantum well (QW) structures of different well width. We first determine the Landé electron $g$ factor of the QWs through resistive detection of electron spin resonance and compare it to the enhanced electron $g$ factor determined from analysis of the magnetotransport. Next, we form laterally defined quantum dots using these quantum wells and extract the electron $g$ factor from analysis of the cotunneling and Kondo effect within the quantum dots. We conclude that the Landé electron $g$ factor of the quantum dot is primarily governed by the electron $g$ factor of the quantum well suggesting that well width is an ideal design parameter for $g$-factor engineering QDs.

• Received 3 March 2014
• Revised 14 October 2014

DOI:https://doi.org/10.1103/PhysRevB.90.235310