Abstract
We evaluate the Landé factor of electrons in quantum dots (QDs) fabricated from GaAs quantum well (QW) structures of different well width. We first determine the Landé electron factor of the QWs through resistive detection of electron spin resonance and compare it to the enhanced electron factor determined from analysis of the magnetotransport. Next, we form laterally defined quantum dots using these quantum wells and extract the electron factor from analysis of the cotunneling and Kondo effect within the quantum dots. We conclude that the Landé electron factor of the quantum dot is primarily governed by the electron factor of the quantum well suggesting that well width is an ideal design parameter for -factor engineering QDs.
- Received 3 March 2014
- Revised 14 October 2014
DOI:https://doi.org/10.1103/PhysRevB.90.235310
©2014 American Physical Society