Formation and stability of point defects in monolayer rhenium disulfide

S. Horzum, D. Çakır, J. Suh, S. Tongay, Y.-S. Huang, C.-H. Ho, J. Wu, H. Sahin, and F. M. Peeters
Phys. Rev. B 89, 155433 – Published 28 April 2014

Abstract

Recently, rhenium disulfide (ReS2) monolayers were experimentally extracted by conventional mechanical exfoliation technique from as-grown ReS2 crystals. Unlike the well-known members of transition metal dichalcogenides (TMDs), ReS2 crystallizes in a stable distorted-1T structure and lacks an indirect to direct gap crossover. Here we present an experimental and theoretical study of the formation, energetics, and stability of the most prominent lattice defects in monolayer ReS2. Experimentally, irradiation with 3-MeV He+2 ions was used to break the strong covalent bonds in ReS2 flakes. Photoluminescence measurements showed that the luminescence from monolayers is mostly unchanged after highly energetic α particle irradiation. In order to understand the energetics of possible vacancies in ReS2 we performed systematic first-principles calculations. Our calculations revealed that the formation of a single sulfur vacancy has the lowest formation energy in both Re and S rich conditions and a random distribution of such defects are energetically more preferable. Sulfur point defects do not result in any spin polarization whereas the creation of Re-containing point defects induce magnetization with a net magnetic moment of 1–3μB. Experimentally observed easy formation of sulfur vacancies is in good agreement with first-principles calculations.

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  • Received 6 February 2014
  • Revised 14 April 2014

DOI:https://doi.org/10.1103/PhysRevB.89.155433

©2014 American Physical Society

Authors & Affiliations

S. Horzum1,2,*, D. Çakır1, J. Suh3, S. Tongay3,4, Y.-S. Huang5, C.-H. Ho5, J. Wu3,4,6, H. Sahin1,†, and F. M. Peeters1,‡

  • 1Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
  • 2Department of Engineering Physics, Faculty of Engineering, Ankara University, 06100 Ankara, Turkey
  • 3Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
  • 4State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, Peoples Republic of China
  • 5Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan
  • 6Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA

  • *seyda.horzumsahin@uantwerpen.be
  • hasan.sahin@uantwerpen.be
  • francois.peeters@uantwerpen.be

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Issue

Vol. 89, Iss. 15 — 15 April 2014

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