Local SiC photoluminescence evidence of hot spot formation and sub-THz coherent emission from a rectangular Bi2Sr2CaCu2O8+δ mesa

Hidetoshi Minami, Chiharu Watanabe, Kota Sato, Shunsuke Sekimoto, Takashi Yamamoto, Takanari Kashiwagi, Richard A. Klemm, and Kazuo Kadowaki
Phys. Rev. B 89, 054503 – Published 7 February 2014

Abstract

From the photoluminescence of SiC microcrystals uniformly covering a rectangular mesa of the high transition temperature Tc superconductor Bi2Sr2CaCu2O8+δ, the local surface temperature T(r) was directly measured during simultaneous sub-THz emission from the N103 intrinsic Josephson junctions (IJJs) in the mesa. At high bias currents I and low bath temperatures Tbath35 K, the center of a large elliptical hot spot with T(r)>Tc jumps dramatically with little current-voltage characteristic changes. The hot spot does not alter the ubiquitous primary and secondary emission conditions: the ac-Josephson relation and the electromagnetic cavity resonance excitation, respectively. Since the most intense sub-THz emission was observed for high Tbath50 K in the low I bias regime where hot spots are absent, hot spots cannot provide the primary mechanisms for increasing the output power, the tunability, or promoting the synchronization of the N IJJs for the sub-THz emission, but can at best coexist nonmutualistically with the emission. No T(r) standing waves were observed.

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  • Received 23 October 2012
  • Revised 11 October 2013

DOI:https://doi.org/10.1103/PhysRevB.89.054503

©2014 American Physical Society

Authors & Affiliations

Hidetoshi Minami1,2,3,*, Chiharu Watanabe1,3, Kota Sato1,3,†, Shunsuke Sekimoto1,3, Takashi Yamamoto1,3,‡, Takanari Kashiwagi1,2,3, Richard A. Klemm4, and Kazuo Kadowaki1,2,3

  • 1Graduate School of Pure and Applied Sciences, University of Tsukuba, Tennodai, Tsukuba, Ibaraki 305-8573, Japan
  • 2Division of Materials Science, Faculty of Pure and Applied Sciences, University of Tsukuba, Tennodai, Tsukuba, Ibaraki 305-8573, Japan
  • 3CREST-JST (Japan Science and Technology Agency)
  • 4Department of Physics, University of Central Florida, Orlando, Florida 32816-2385, USA

  • *minami@bk.tsukuba.ac.jp
  • Present address: Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan; ksato1014@icloud.com
  • Present address: Wide Bandgap Materials Group, Optical and Electronic Materials Unit, Environment and Energy Materials Division, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan; YAMAMOTO.Takashi@nims.go.jp

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Vol. 89, Iss. 5 — 1 February 2014

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