Strong magnetophonon resonance induced triple G-mode splitting in graphene on graphite probed by micromagneto Raman spectroscopy

Caiyu Qiu, Xiaonan Shen, Bingchen Cao, Chunxiao Cong, Riichiro Saito, Jingjiang Yu, Mildred S. Dresselhaus, and Ting Yu
Phys. Rev. B 88, 165407 – Published 10 October 2013

Abstract

The resonance between the G-band phonon excitation and Landau level optical transitions in graphene has been systematically studied by micromagneto Raman mapping. In purely decoupled graphene regions on a graphite substrate, eight traces of anticrossing spectral features with G-mode peaks are observed as a function of magnetic fields up to 9 T, and these traces correspond to either symmetric or asymmetric Landau level transitions. Three distinct split peaks of the G mode, named G, Gi, and G+, are observed at the strong magnetophonon resonance condition corresponding to a magnetic field of ∼4.65 T. These three special modes are attributed to (i) the coupling between the G phonon and the magneto-optical transitions, which is responsible for G+ and G and can be well described by the two coupled mode model and (ii) the magnetic field-dependent oscillation of the Gi band, which is currently explained by the G band of graphite modified by the interaction with G+ and G. The pronounced interaction between Dirac fermions and phonons demonstrates a dramatically small Landau level width (∼1.3 meV), which is a signature of the ultrahigh quality graphene obtained on the surface of graphite.

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  • Received 26 April 2013

DOI:https://doi.org/10.1103/PhysRevB.88.165407

©2013 American Physical Society

Authors & Affiliations

Caiyu Qiu1,*, Xiaonan Shen1,*, Bingchen Cao1, Chunxiao Cong1, Riichiro Saito2, Jingjiang Yu3, Mildred S. Dresselhaus4,5, and Ting Yu1,6,7,†

  • 1Division of Physics and Applied Physics, School of Mathematical and Physical Science, Nanyang Technological University, 637371, Singapore
  • 2Department of Physics, Tohoku University, Sendai, Miyagi 9808578, Japan
  • 3Nanotechnology Measurements Division, Agilent Technologies, Inc., Chandler, Arizona 85226, USA
  • 4Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139-4037, USA
  • 5Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139-4037, USA
  • 6Department of Physics, Faculty of Science, National University of Singapore, 117542, Singapore
  • 7Graphene Research Centre, National University of Singapore, 117546, Singapore

  • *These authors contributed equally to this work.
  • Corresponding author: yuting@ntu.edu.sg

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Issue

Vol. 88, Iss. 16 — 15 October 2013

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