Ferroelectric distortions in doped ferroelectrics: BaTiO3:M (M=VFe)

Hirak Kumar Chandra, Kapil Gupta, Ashis Kumar Nandy, and Priya Mahadevan
Phys. Rev. B 87, 214110 – Published 27 June 2013

Abstract

A major challenge in the search for multiferroic materials among transition metal compounds has been that ferroelectricity is primarily found in d0 materials while magnetism is found in dn systems. Considering a well-known ferroelectric oxide, namely BaTiO3, the question we asked within a theoretical study was whether ferroelectric distortions disappeared for the slightest amount of doping. Surprisingly, in the case of V-doped BaTiO3, ferroelectricity was found to be stronger than in the undoped limit. Another surprise was that the presence of charged impurities rather than free carriers was found to be most detrimental to the presence of ferroelectric distortions. These ideas of the low doping limit were used to design alternative multiferroics.

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  • Received 29 April 2011

DOI:https://doi.org/10.1103/PhysRevB.87.214110

©2013 American Physical Society

Authors & Affiliations

Hirak Kumar Chandra1, Kapil Gupta1, Ashis Kumar Nandy1,2, and Priya Mahadevan1

  • 1Department of Condensed Matter Physics and Material Sciences, S.N. Bose National Centre for Basic Sciences, Block JD, Sector-III, Saltlake, Kolkata 700098, India
  • 2Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India

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Issue

Vol. 87, Iss. 21 — 1 June 2013

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