Indentation strength of ultraincompressible rhenium boride, carbide, and nitride from first-principles calculations

Chenpeng Zang, Hong Sun, John S. Tse, and Changfeng Chen
Phys. Rev. B 86, 014108 – Published 16 July 2012

Abstract

Using a recently developed first-principles approach for determining indentation strength [Z. Pan, H. Sun, and C. Chen, Phys. Rev. Lett. 98, 135505 (2007); Z. Pan, H. Sun, and C. Chen, Phys. Rev. Lett. 102, 055503 (2009)], we performed calculations of the ideal strength of hexagonal Re, Re3N, Re2N, Re2C, Re2B, and ReB2 in various shear deformation directions beneath the Vickers indentor. Our results show that the normal compressive pressure beneath the indentor weakens the strength of these electron-rich rhenium boride, carbide, and nitride compounds that belong to a distinct class of ultraincompressible and ultrahard materials. The reduction of indentation strength in these materials stems from lateral bond and volume expansions driven by the normal compressive pressure mediated by the high-density valence electrons in these structures. We compare the calculated indentation strength to the Poisson's ratio, which measures the lateral structural expansion, for the rhenium boride, carbide, and nitride compounds as well as diamond and cubic boron nitride. Our analysis indicates that although the normal pressure beneath the indentor generally leads to more significant reduction of indentation strength in materials with larger Poisson's ratios, crystal and electronic structures also play important roles in determining the structural response under indentation. The present study reveals structural deformation modes and the underlying atomistic mechanisms in transition-metal boride, carbide, and nitride compounds under the Vickers indentation. The results are distinctive from those of the traditional covalent superhard materials. The insights obtained from this work have important implications for further exploration and design of ultrahard materials.

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  • Received 12 June 2012

DOI:https://doi.org/10.1103/PhysRevB.86.014108

©2012 American Physical Society

Authors & Affiliations

Chenpeng Zang1, Hong Sun1,2,*, John S. Tse3, and Changfeng Chen2,†

  • 1Department of Physics, Shanghai Jiao Tong University, Shanghai 200240, and Key Laboratory of Artificial Structures and Quantum Control, Ministry of Education, China
  • 2Department of Physics and High Pressure Science and Engineering Center, University of Nevada, Las Vegas, Nevada 89154, USA
  • 3Department of Physics and Engineering Physics, University of Saskatchewan, Canada, SK S7N 5E2

  • *Corresponding author: hsun@sjtu.edu.cn
  • Corresponding author: chen@physics.unlv.edu

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Vol. 86, Iss. 1 — 1 July 2012

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