Thermoelectric transport properties of the n-type impurity Al in PbTe

Christopher M. Jaworski and Joseph P. Heremans
Phys. Rev. B 85, 033204 – Published 23 January 2012

Abstract

Because Tl and In are known to be resonant levels in IV–VI semiconductors, here we synthesize and electrically characterize lead telluride doped n-type with aluminum. The results show that Al behaves as a normal donor in PbTe, reaching a maximum electron concentration of 4 1019 cm3. At 300 K, the thermopower, when plotted as function of electron concentration (the Pisarenko relation), follows the calculated line for the conduction band of PbTe, and no enhancement is observed that could indicate the presence of a resonant level.

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  • Received 22 October 2011

DOI:https://doi.org/10.1103/PhysRevB.85.033204

©2012 American Physical Society

Authors & Affiliations

Christopher M. Jaworski1 and Joseph P. Heremans1,2,*

  • 1Department of Mechanical and Aerospace Engineering, Scott Laboratory, 201 West 19th Avenue, The Ohio State University, Columbus, Ohio, 43210-1142, USA
  • 2Department of Physics, The Ohio State University, Columbus, Ohio, 43210, USA

  • *heremans.1@osu.edu

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Issue

Vol. 85, Iss. 3 — 15 January 2012

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