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Microwave response of a magnetic single-electron transistor

Scott A. Bender, Yaroslav Tserkovnyak, and Arne Brataas
Phys. Rev. B 82, 180403(R) – Published 10 November 2010

Abstract

We consider a single-electron transistor in the form of a ferromagnetic dot in contact with normal-metal and pinned ferromagnetic leads. Microwave-driven precession by the dot induces a pumped electric current. In open circuits, this pumping produces a measurable reverse bias voltage, which can be enhanced and made highly nonlinear by Coulomb blockade in the dot. The dependence of this bias on the power and spectrum of microwave irradiation may be utilized to develop nanoscale microwave detectors analogous to single-electron transistor-based electrostatic sensors and nanoelectromechanical devices.

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  • Received 4 October 2010

DOI:https://doi.org/10.1103/PhysRevB.82.180403

©2010 American Physical Society

Authors & Affiliations

Scott A. Bender1, Yaroslav Tserkovnyak1, and Arne Brataas2

  • 1Department of Physics and Astronomy, University of California, Los Angeles, California 90095, USA
  • 2Department of Physics, Norwegian University of Science and Technology, NO-7491 Trondheim, Norway

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Issue

Vol. 82, Iss. 18 — 1 November 2010

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