Nanoscale resistance switching in manganite thin films: Sharp voltage threshold and pulse-width dependence

Jon-Olaf Krisponeit, Christin Kalkert, Bernd Damaschke, Vasily Moshnyaga, and Konrad Samwer
Phys. Rev. B 82, 144440 – Published 28 October 2010

Abstract

We report the local-conductivity properties of a La0.8Ca0.2MnO3 thin film, studied by conductive atomic force microscopy. Nonvolatile and bipolar reversible switching of nanometer-sized regions was observed. A threshold voltage, Uc3V, and a logarithmic pulse-width dependence compatible with domain-wall creep were revealed. The results are difficult to explain in terms of an ionic drift scenario but rather indicate a switching mechanism based on orbital and accompanying structural changes. A phenomenological model of an electric field-induced structural transition is proposed.

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  • Received 6 May 2010

DOI:https://doi.org/10.1103/PhysRevB.82.144440

©2010 American Physical Society

Authors & Affiliations

Jon-Olaf Krisponeit*, Christin Kalkert, Bernd Damaschke, Vasily Moshnyaga, and Konrad Samwer

  • I. Physikalisches Institut, Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany

  • *jkrispo@gwdg.de

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Issue

Vol. 82, Iss. 14 — 1 October 2010

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