Thermal fluctuations of the electric field in the presence of carrier drift

Boris Shapiro
Phys. Rev. B 82, 075205 – Published 6 August 2010

Abstract

We consider a semiconductor in a nonequilibrium steady state with a dc current. On top of the stationary carrier motion there are fluctuations. It is shown that the stationary motion of the carriers (i.e., their drift) can have a profound effect on the electromagnetic field fluctuations in the bulk of the sample as well as outside it, close to the surface (evanescent waves in the near field). The effect is particularly pronounced near the plasma frequency. This is because drift leads to a significant modification of the dispersion relation for the bulk and surface plasmons.

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  • Received 27 April 2010

DOI:https://doi.org/10.1103/PhysRevB.82.075205

©2010 American Physical Society

Authors & Affiliations

Boris Shapiro

  • Department of Physics, Technion–Israel Institute of Technology, Haifa 32000, Israel

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Issue

Vol. 82, Iss. 7 — 15 August 2010

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