Phase diagram and domain splitting in thin ferroelectric films with incommensurate phase

A. N. Morozovska, E. A. Eliseev, JianJun Wang, G. S. Svechnikov, Yu. M. Vysochanskii, Venkatraman Gopalan, and Long-Qing Chen
Phys. Rev. B 81, 195437 – Published 27 May 2010

Abstract

We studied the phase diagram of thin ferroelectric films with incommensurate phases and semiconductor properties within the framework of Landau-Ginzburg-Devonshire theory. We performed both analytical calculations and phase-field modeling of the temperature and thickness dependencies of the period of incommensurate 180°-domain structures appeared in thin films covered with perfect electrodes. It is found that the transition temperature from the paraelectric into the incommensurate phase as well as the period of incommensurate domain structure strongly depend on the film thickness, depolarization field contribution, surface and gradient energy. The results may provide insight on the temperature dependence of domain structures in nanosized ferroics with inherent incommensurate phases.

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  • Received 23 December 2009

DOI:https://doi.org/10.1103/PhysRevB.81.195437

©2010 American Physical Society

Authors & Affiliations

A. N. Morozovska1,*,†, E. A. Eliseev1,2, JianJun Wang3, G. S. Svechnikov1, Yu. M. Vysochanskii4, Venkatraman Gopalan3, and Long-Qing Chen3,*,‡

  • 1V. Lashkarev Institute of Semiconductor Physics, NAS of Ukraine, prospect Nauki 41, 03028 Kiev, Ukraine
  • 2Institute for Problems of Materials Science, NAS of Ukraine, Krjijanovskogo 3, 03142 Kiev, Ukraine
  • 3Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, USA
  • 4Institute for Solid State Physics and Chemistry, Uzhgorod University, 88000 Uzhgorod, Ukraine

  • *Corresponding author.
  • morozo@i.com.ua
  • lqc3@psu.edu

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Vol. 81, Iss. 19 — 15 May 2010

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