Exciton front propagation in photoexcited GaAs quantum wells

Sen Yang, L. V. Butov, L. S. Levitov, B. D. Simons, and A. C. Gossard
Phys. Rev. B 81, 115320 – Published 16 March 2010
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Abstract

We report on the study of spatiotemporal self-organization of carriers in photoexcited GaAs quantum wells. Propagating interfaces between electron-rich and hole-rich regions are seen as expanding and collapsing exciton rings in exciton emission patterns. The interfaces preserve their integrity during expansion, remaining as sharp as in the steady state, which indicates that the dynamics is controlled by carrier transport. The front propagation velocity is measured and compared to theoretical model. The measurements of expanding and collapsing exciton rings afford a contactless method for probing the electron and hole transport.

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  • Received 20 August 2009

DOI:https://doi.org/10.1103/PhysRevB.81.115320

©2010 American Physical Society

Authors & Affiliations

Sen Yang1, L. V. Butov1, L. S. Levitov2, B. D. Simons3, and A. C. Gossard4

  • 1Department of Physics, University of California at San Diego, La Jolla, California 92093-0319, USA
  • 2Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
  • 3Cavendish Laboratory, Madingley Road, Cambridge CB3 OHE, United Kingdom
  • 4Materials Department, University of California at Santa Barbara, Santa Barbara, California 93106-5050, USA

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Issue

Vol. 81, Iss. 11 — 15 March 2010

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