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Role of electron-hole pair formation in organic magnetoresistance

Sayani Majumdar, Himadri S. Majumdar, Harri Aarnio, Dirk Vanderzande, Reino Laiho, and Ronald Österbacka
Phys. Rev. B 79, 201202(R) – Published 1 May 2009

Abstract

Magnetoelectrical measurements were performed on diodes and bulk heterojunction solar cell blends (BHSCs) to clarify the role of formation of Coulombically bound electron-hole (e-h) pairs on the magnetoresistance (MR) response in organic thin-film devices. BHSCs are suitable model systems because they effectively quench excitons but the probability of forming e-h pairs in them can be tuned over orders of magnitude by the choice of material and solvent in the blend. We have systematically varied the e-h recombination coefficients, which are directly proportional to the probability for the charge carriers to meet in space, and found that a reduced probability of electrons and holes meeting in space lead to the disappearance of the MR. Our results clearly show that MR is a direct consequence of the e-h pair formation. We also found that the MR line shape follows a power-law dependence of B0.5 at higher fields.

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  • Received 21 January 2009

DOI:https://doi.org/10.1103/PhysRevB.79.201202

©2009 American Physical Society

Authors & Affiliations

Sayani Majumdar1,2,*, Himadri S. Majumdar1, Harri Aarnio1, Dirk Vanderzande3, Reino Laiho2, and Ronald Österbacka1

  • 1Department of Physics and CoE for Functional Materials, Åbo Akademi University, Turku 20500, Finland
  • 2Wihuri Physical Laboratory, University of Turku, Turku 20014, Finland
  • 3Chemistry Division, Institute of Material Research, Universiteit Hasselt, B3590 Diepenbeek, Belgium

  • *Corresponding author; sayani.majumdar@utu.fi

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Issue

Vol. 79, Iss. 20 — 15 May 2009

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