High-resolution x-ray photoemission spectroscopy measurements are used to determine the valence band offset of wurtzite-InN/GaN(0001) heterojunctions to be $0.58\pm 0.08\text{eV}$. This is discussed within the context of previous measurements and calculations and is in agreement with the value of $0.52\pm 0.14\text{eV}$ determined from the alignment of the experimentally determined charge neutrality levels in InN and GaN. The heterojunction forms in the type-I straddling configuration with a conduction band offset of $2.22\pm 0.10\text{eV}$.

• Received 19 May 2008

DOI:https://doi.org/10.1103/PhysRevB.78.033308