Electron effective mass and Si-donor binding energy in GaAs1xNx probed by a high magnetic field

G. Allison, S. Spasov, A. Patanè, L. Eaves, N. V. Kozlova, J. Freudenberger, M. Hopkinson, and G. Hill
Phys. Rev. B 77, 125210 – Published 12 March 2008

Abstract

We study the magnetoresistance of the dilute nitride alloy GaAs1xNx in magnetic fields up to 47T. We observe a strong magnetophonon resonance effect and a large transverse magnetoresistance, which provide the means of measuring the N-induced enhancement of the electron effective mass and of investigating the magnetic freeze-out of conduction electrons on Si donors in GaAs1xNx.

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  • Received 21 November 2007

DOI:https://doi.org/10.1103/PhysRevB.77.125210

©2008 American Physical Society

Authors & Affiliations

G. Allison, S. Spasov, A. Patanè*, and L. Eaves

  • School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom

N. V. Kozlova and J. Freudenberger

  • IFW Dresden, Institute for Metallic Materials, P.O. Box 270116, D-01171 Dresden, Germany
  • and Dresden High Magnetic Field Laboratory, P.O. Box 510119, D-01314 Dresden, Germany

M. Hopkinson and G. Hill

  • Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, S3 3JD, United Kingdom

  • *Corresponding author; amalia.patane@nottingham.ac.uk

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Vol. 77, Iss. 12 — 15 March 2008

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