Quenched magnetic moment in Mn-doped amorphous Si films

Li Zeng (曾立), E. Helgren, M. Rahimi, F. Hellman, R. Islam, B. J. Wilkens, R. J. Culbertson, and David J. Smith
Phys. Rev. B 77, 073306 – Published 19 February 2008

Abstract

The absence of a Mn local moment was observed in Mn-doped amorphous silicon (aMnxSi1x) films. The magnetic susceptibility obeys the Curie-Weiss law for a wide range of x (5×103 up to 0.175) but with extremely small moment. Magnetization measurements suggest that this behavior occurs because only a small percentage of Mn (Mn2+ states with J=S=52) contribute to the magnetization. Thus, the magnetic moments are quenched for the majority of Mn atoms, contrary to the general belief of the existence of a localized Mn moment in Si. X-ray absorption spectroscopy suggests that the quenching of Mn moments is attributed to the formation of an itinerant but Anderson-localized impurity band, forming at x as low as 5×103.

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  • Received 22 October 2007

DOI:https://doi.org/10.1103/PhysRevB.77.073306

©2008 American Physical Society

Authors & Affiliations

Li Zeng (曾立)*

  • Materials Science and Engineering Program, University of California, San Diego, La Jolla, California 92093, USA

E. Helgren, M. Rahimi, and F. Hellman

  • Department of Physics, University of California, Berkeley, Berkeley, California 94720, USA

R. Islam and B. J. Wilkens

  • Center for Solid State Science, Arizona State University, Tempe, Arizona 85287, USA

R. J. Culbertson and David J. Smith

  • Department of Physics, Arizona State University, Tempe, Arizona 85287, USA

  • *lzeng@ucsd.edu

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Issue

Vol. 77, Iss. 7 — 15 February 2008

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