Abstract
Reversible control of magnetism is reported for a Fe thin film in proximity of a single crystal. Large magnetization changes emerge in response to ferroelectric switching and structural transitions of controlled by applied electric fields and temperature, respectively. Interface strain coupling is the primary mechanism altering the induced magnetic anisotropy. As a result, coercivity changes up to 120% occur between the various structural states of . Up to 20% coercivity change is achieved via electrical control at room temperature. Our all solid state ferroelectric-ferromagnetic heterostructures open viable possibilities for technological applications.
- Received 22 August 2007
DOI:https://doi.org/10.1103/PhysRevB.76.092108
©2007 American Physical Society