Andreev reflection measurements of spin polarization

P. Chalsani, S. K. Upadhyay, O. Ozatay, and R. A. Buhrman
Phys. Rev. B 75, 094417 – Published 15 March 2007

Abstract

We discuss aspects of Andreev reflection (AR) measurements in normal metal-superconductor (N-S) and ferromagnet-superconductor (F-S) devices. We describe the analytical model used to quantify spin polarization from the conductance measurements and discuss the validity of this simple model using parabolic bands as simple surrogates for real band structures. We present (AR) measurements of spin polarization in a CuPtPb and CoPtPb lithographically fabricated nanocontact systems where a scattering layer of has been deliberately added to the interface to enable the study of the effect of pair-breaking scattering on AR conductance and spin polarization. We compare these results to the previously published results from clean CuPb and CoPb devices and argue that the measurements in devices with the Pt layer can be explained by the presence of inelastic-scattering-induced pair-breaking effects. We modify the analytical model to include this effect and show that in some instances, it may be impossible to distinguish between the effects of a finite spin polarization and inelastic scattering. This has implications for AR measurements of spin polarization at disordered or poorly formed F-S interfaces.

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  • Received 12 October 2006

DOI:https://doi.org/10.1103/PhysRevB.75.094417

©2007 American Physical Society

Authors & Affiliations

P. Chalsani, S. K. Upadhyay, O. Ozatay, and R. A. Buhrman

  • School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA

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Issue

Vol. 75, Iss. 9 — 1 March 2007

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