Doping dependence of polaron hopping energies in La1xCaxMnO3 (0x0.15)

K. P. Neupane, J. L. Cohn, H. Terashita, and J. J. Neumeier
Phys. Rev. B 74, 144428 – Published 27 October 2006

Abstract

Measurements of the low-frequency (f100kHz) permittivity at T160K and dc resistivity (T430K) are reported for La1xCaxMnO3 (0x0.15). Static dielectric constants are determined from the low-T limiting behavior of the permittivity. The estimated polarizability for bound holes 1022cm3 implies a radius comparable to the interatomic spacing, consistent with the small polaron picture established from prior transport studies near room temperature and above on nearby compositions. Relaxation peaks in the dielectric loss associated with charge-carrier hopping yield activation energies in good agreement with low-T hopping energies determined from variable-range hopping fits of the dc resistivity. The doping dependence of these energies suggests that the orthorhombic, canted antiferromagnetic ground state tends toward an insulator-metal transition that is not realized due to the formation of the ferromagnetic insulating state near Mn4+ concentration 0.13.

    • Received 6 April 2006

    DOI:https://doi.org/10.1103/PhysRevB.74.144428

    ©2006 American Physical Society

    Authors & Affiliations

    K. P. Neupane1, J. L. Cohn1, H. Terashita2,*, and J. J. Neumeier2

    • 1Department of Physics, University of Miami, Coral Gables, Florida 33124, USA
    • 2Department of Physics, Montana State University, Bozeman, Montana 59717, USA

    • *Present address: Research Center Jülich, D-52425 Jülich, Germany.

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    Issue

    Vol. 74, Iss. 14 — 1 October 2006

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