Simulation of clustering and anisotropy due to Co step-edge segregation in vapor-deposited CoPt3

B. B. Maranville, M. Schuerman, and F. Hellman
Phys. Rev. B 73, 104435 – Published 22 March 2006

Abstract

An atomistic mechanism is proposed for the creation of structural anisotropy and consequent large perpendicular magnetic anisotropy in vapor-deposited films of CoPt3. Energetic considerations of bonding in Co-Pt suggest that Co segregates to step edges due to their low coordination, for all film orientations, while Pt segregates to the two low index surfaces. Coalescence of islands during growth cause these Co-rich step edges to become flat thin Co platelets in a Pt rich matrix, giving rise to the experimentally observed magnetic anisotropy. This proposed model is tested with kinetic Monte Carlo simulation of the vapor deposition growth. A tight-binding, second-moment approximation to the interatomic potential is used to calculate the probability of an atom hopping from one surface site to another, assuming an Arrhenius-like activation model of surface motion. Growth is simulated by allowing many hopping events per adatom. The simulated as-grown films show an asymmetry in Co-Co bonding between the in-plane and out-of-plane directions, in good agreement with experimental data. The growth temperature dependence found in the simulations is strong and similar to that seen in experiments, and an increase in Co edge segregation with increasing temperature is also observed.

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  • Received 21 July 2005

DOI:https://doi.org/10.1103/PhysRevB.73.104435

©2006 American Physical Society

Authors & Affiliations

B. B. Maranville*, M. Schuerman, and F. Hellman

  • Physics Department, University of California at San Diego, San Diego, California 92093, USA

  • *Currently at Metallurgy Division, National Institute of Standards and Technology, Gaithersburg, Maryland. Electronic address: bbm@nist.gov
  • Physics Department, University of California at Berkeley; Materials Sciences Division, LBNL, Berkeley, California.

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Issue

Vol. 73, Iss. 10 — 1 March 2006

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