Influence of the long-lived quantum Hall potential on the characteristics of quantum devices

M. Pioro-Ladrière, A. Usher, A. S. Sachrajda, J. Lapointe, J. Gupta, Z. Wasilewski, S. Studenikin, and M. Elliott
Phys. Rev. B 73, 075309 – Published 7 February 2006

Abstract

Hysteretic effects are reported in magneto-transport experiments on lateral quantum devices. The effects are characterized by two vastly different relaxation times (minutes and days). It is shown that the observed phenomena are related to long-lived eddy currents. This is confirmed by torsion-balance magnetometry measurements of the same two-dimensional electron gas (2DEG) material. These observations show that the induced quantum Hall potential at the edges of the 2DEG reservoirs influences transport through the devices, and have important consequences for the transport properties of all lateral devices, subjected to quantizing magnetic fields.

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  • Received 10 November 2005

DOI:https://doi.org/10.1103/PhysRevB.73.075309

©2006 American Physical Society

Authors & Affiliations

M. Pioro-Ladrière

  • Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario K1A 0R6, Canada and Département de physique and Regroupement québécois sur les matériaux de pointe, Université de Sherbrooke, Sherbrooke, Québec J1K 2R1, Canada

A. Usher

  • Quantum Interacting Systems Group, School of Physics, University of Exeter, Stocker Road, Exeter EX4 4QL, United Kingdom

A. S. Sachrajda, J. Lapointe, J. Gupta, Z. Wasilewski, and S. Studenikin

  • Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario K1A 0R6, Canada

M. Elliott

  • School of Physics and Astronomy, Cardiff University, 5 The Parade, Cardiff CF24 3YB, United Kingdom

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Vol. 73, Iss. 7 — 15 February 2006

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