Direct observation of site-specific valence electronic structure at the SiO2Si interface

Y. Yamashita, S. Yamamoto, K. Mukai, J. Yoshinobu, Y. Harada, T. Tokushima, T. Takeuchi, Y. Takata, S. Shin, K. Akagi, and S. Tsuneyuki
Phys. Rev. B 73, 045336 – Published 31 January 2006

Abstract

Atom specific valence electronic structures at the solid-solid interface are elucidated successfully using soft x-ray absorption and emission spectroscopy. In order to demonstrate the versatility of this method, we investigated the SiO2Si interface as a prototype and directly observed valence electronic states projected at the particular atoms of the SiO2Si interface; the local electronic structure strongly depends on the chemical states of each atom. In addition, we compared the experimental results with first-principles calculations, which quantitatively revealed the interface properties in atomic scale.

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  • Received 22 November 2005

DOI:https://doi.org/10.1103/PhysRevB.73.045336

©2006 American Physical Society

Authors & Affiliations

Y. Yamashita1,*, S. Yamamoto1, K. Mukai1, J. Yoshinobu1, Y. Harada2, T. Tokushima2, T. Takeuchi2, Y. Takata2, S. Shin1,2, K. Akagi3, and S. Tsuneyuki3

  • 1The Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan
  • 2Riken/SPring-8, Sayo-gun, Hyogo 679-5148, Japan
  • 3Department of Physics, Graduate School of Science, The University of Tokyo, Bunkyo-ku, Tokyo 113-0033, Japan

  • *Author to whom correspondence should be addressed; e-mail: yyama@issp.u-tokyo.ac.jp

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Vol. 73, Iss. 4 — 15 January 2006

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