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Interaction and disorder in bilayer counterflow transport at filling-factor one

E. Tutuc and M. Shayegan
Phys. Rev. B 72, 081307(R) – Published 18 August 2005

Abstract

We study high-mobility, interacting GaAs bilayer hole systems exhibiting counterflow superfluid transport at total filling-factor ν=1. As the density of the two layers is reduced, making the bilayer more interacting, the counterflow Hall resistivity (ρxy) decreases at a given temperature, while the counterflow longitudinal resistivity (ρxx), which is much larger than ρxy, hardly depends on density. On the other hand, a small imbalance in the layer densities can result in significant changes in ρxx at ν=1, while ρxy remains vanishingly small. Our data suggest that the finite ρxx at ν=1 is a result of mobile vortices in the superfluid created by the ubiquitous disorder in this system.

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  • Received 20 June 2005

DOI:https://doi.org/10.1103/PhysRevB.72.081307

©2005 American Physical Society

Authors & Affiliations

E. Tutuc* and M. Shayegan

  • Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA

  • *Present address: I.B.M. T.J. Watson Research Center, Yorktown Heights, NY 10598.

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Issue

Vol. 72, Iss. 8 — 15 August 2005

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