Abstract
We study high-mobility, interacting GaAs bilayer hole systems exhibiting counterflow superfluid transport at total filling-factor . As the density of the two layers is reduced, making the bilayer more interacting, the counterflow Hall resistivity decreases at a given temperature, while the counterflow longitudinal resistivity , which is much larger than , hardly depends on density. On the other hand, a small imbalance in the layer densities can result in significant changes in at , while remains vanishingly small. Our data suggest that the finite at is a result of mobile vortices in the superfluid created by the ubiquitous disorder in this system.
- Received 20 June 2005
DOI:https://doi.org/10.1103/PhysRevB.72.081307
©2005 American Physical Society