Atomistic theory of electronic and optical properties of InAsInP self-assembled quantum dots on patterned substrates

Weidong Sheng and Pawel Hawrylak
Phys. Rev. B 72, 035326 – Published 14 July 2005

Abstract

We report on an atomistic theory of electronic structure and optical properties of a single InAs quantum dot grown on InP patterned substrate. The spatial positioning of individual dots using InP nanotemplates results in a quantum dot embedded in InP pyramid. The strain distribution of a quantum dot in the InP pyramid is calculated using the continuum elasticity theory. The electron and valence hole single-particle states are calculated using an atomistic effective-bond-orbital model with second nearest-neighbor interactions, coupled to strain via the Bir-Pikus Hamiltonian. The optical properties are determined by solving the many-exciton Hamiltonian for interacting electron and hole complexes using the configuration-interaction method. The effect of positioning of quantum dots using a nanotemplate on their optical spectra is determined by a comparison with dots on unpatterned substrates, and with experimental results. The possibility of tuning the quantum dot properties with varying the nanotemplate is explored.

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  • Received 25 February 2005

DOI:https://doi.org/10.1103/PhysRevB.72.035326

©2005 American Physical Society

Authors & Affiliations

Weidong Sheng* and Pawel Hawrylak

  • Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, ON, Canada K1A 0R6

  • *Electronic address: weidong.sheng@nrc-cnrc.gc.ca

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Issue

Vol. 72, Iss. 3 — 15 July 2005

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