Influence of strain in Ag on Al(111) and Al on Ag(100) thin film growth

V. Fournée, J. Ledieu, T. Cai, and P. A. Thiel
Phys. Rev. B 67, 155401 – Published 1 April 2003
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Abstract

We demonstrate the influence of interfacial strain on the growth modes of Ag films on Al(111), despite the small magnitude of the lattice misfit in this system. The strain is relieved by the formation of stacking fault domains bounded by Shockley partial dislocations. The growth mode and the step roughness appear to be strongly connected. Growth is three-dimensional (3D) as long as the steps are straight, but switches to 2D at higher coverage when the steps become rough. Anisotropic strain relaxation and straight steps seem to be related. We also report related observations for Al deposited on Ag(100).

  • Received 13 October 2002

DOI:https://doi.org/10.1103/PhysRevB.67.155401

©2003 American Physical Society

Authors & Affiliations

V. Fournée1,*,†, J. Ledieu2, T. Cai1,‡, and P. A. Thiel1

  • 1Ames Laboratory and Department of Chemistry, Iowa State University, Ames, Iowa 50011
  • 2Surface Science Research Centre, The University of Liverpool, Liverpool L69 3BX, United Kingdom

  • *Present address: LSG2M, CNRS-UMR 7584, Ecole des Mines, F-54042 Nancy, France.
  • Email address: Vincent.Fournee@mines.u-nancy.fr
  • Present address: Brookhaven National Laboratory, P.O. Box 5000, Upton, NY 11973-5000.

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Issue

Vol. 67, Iss. 15 — 15 April 2003

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