Structural determination of two-dimensional YSi2 epitaxially grown on Si(111)

C. Rogero, C. Polop, L. Magaud, J. L. Sacedón, P. L. de Andrés, and J. A. Martín-Gago
Phys. Rev. B 66, 235421 – Published 30 December 2002
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Abstract

We have used a combination of dynamical low-energy-electron diffraction and density functional formalism calculations to find a structural model for two-dimensional (2D) YSi2 layers epitaxially grown on Si(111). Both techniques show that the geometric structure of the yttrium silicide is quite similar to other 2D rare-earth silicides. The surface termination consists of a relaxed Si-bilayer and underlying Y atoms on T4 sites [with respect to the Si(111) interface]. The low-energy electron diffraction study shows several occurrences of minima in the R factor. The analysis of diffracted beams measured at non-normal incidence allows us to discriminate the spurious minima.

  • Received 12 April 2002

DOI:https://doi.org/10.1103/PhysRevB.66.235421

©2002 American Physical Society

Authors & Affiliations

C. Rogero1, C. Polop1,*, L. Magaud2, J. L. Sacedón1, P. L. de Andrés1, and J. A. Martín-Gago1

  • 1Instituto Ciencia de Materiales de Madrid–CSIC, 28049-Cantoblanco, Spain
  • 2Laboratoire d’Etudes des Propriétés Electroniques des Solides, B.P. 166, 38042 Grenoble Cedex 9, France

  • *Current address: I. Physikalisches Institut RWTH-Aachen, 52056 Aachen, Germany.

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Vol. 66, Iss. 23 — 15 December 2002

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