G-band resonant Raman study of 62 isolated single-wall carbon nanotubes

A. Jorio, A. G. Souza Filho, G. Dresselhaus, M. S. Dresselhaus, A. K. Swan, M. S. Ünlü, B. B. Goldberg, M. A. Pimenta, J. H. Hafner, C. M. Lieber, and R. Saito
Phys. Rev. B 65, 155412 – Published 29 March 2002
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Abstract

We report G-band resonance Raman spectra of single-wall carbon nanotubes (SWNTs) at the single-nanotube level. By measuring 62 different isolated SWNTs resonant with the incident laser, and having diameters dt ranging between 0.95 nm and 2.62 nm, we have conclusively determined the dependence of the two most intense G-band features on the nanotube structure. The higher-frequency peak is not diameter dependent (ωG+=1591cm1), while the lower-frequency peak is given by ωG=ωG+C/dt2, with C being different for metallic and semiconducting SWNTs (CM>CS). The peak frequencies do not depend on nanotube chiral angle. The intensity ratio between the two most intense features is in the range 0.1<IωG/IωG+<0.3 for most of the isolated SWNTs (90%). Unusually high or low IωG/IωG+ ratios are observed for a few spectra coming from SWNTs under special resonance conditions, i.e., SWNTs for which the incident photons are in resonance with the E44S interband transition and scattered photons are in resonance with E33S. Since the Eii values depend sensitively on both nanotube diameter and chirality, the (n,m) SWNTs that should exhibit such a special G-band spectra can be predicted by resonance Raman theory. The agreement between theoretical predictions and experimental observations about these special G-band phenomena gives additional support for the (n,m) assignment from resonance Raman spectroscopy.

  • Received 14 July 2001

DOI:https://doi.org/10.1103/PhysRevB.65.155412

©2002 American Physical Society

Authors & Affiliations

A. Jorio1,2, A. G. Souza Filho1,3, G. Dresselhaus4, M. S. Dresselhaus1,5, A. K. Swan6, M. S. Ünlü6, B. B. Goldberg6,7, M. A. Pimenta2, J. H. Hafner8,*, C. M. Lieber8, and R. Saito9

  • 1Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139-4307
  • 2Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, MG, 30123-970 Brazil
  • 3Departamento de Física, Universidade Federal do Ceará, Fortaleza - CE, 60455-760 Brazil
  • 4Francis Bitter Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139-4307
  • 5Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139-4307
  • 6Electrical and Computer Engineering Department, Boston University, Boston, Massachusetts 02215
  • 7Department of Physics, Boston University, Boston, Massachusetts 02215
  • 8Department of Chemistry, Harvard University, Cambridge, Massachusetts 02138
  • 9Department of Electronic Engineering, University of Electro-Communications, Tokyo, 182-8585 Japan

  • *Present address: Department of Physics, Rice University, Houston, TX.

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Vol. 65, Iss. 15 — 15 April 2002

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